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Investigations on vacuum-evaporated CSZ thin films for thermal barrier applications

机译:用于热障用途的真空蒸发CSZ薄膜的研究

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Ceria-stabilized zirconia (CSZ) thin films have been developed over Ni-based alloy substrate by vacuum evaporation method using an electron beam. X-ray diffraction (XRD) analysis of the film heat treated at different temperatures reveals monoclinic phase stabilization. Transmission measurements of the films annealed at different temperatures, in the wavelength region 300–1,100 nm, indicate that the band gap energy of the films lies between 3.6 and 3.8 eV. Refractive index of the films was found to increase with the increase in the annealing temperature. Micro hardness of the films increases nonlinearly with the increase in annealing temperature, indicating an improvement in the hardness of the films. Thermal conductivity studies of the CSZ-coated substrate show a nonlinear decrease with the increase in annealing temperature. Surface investigations of the CSZ films confirm an increase in grain size and a decrease in surface roughness with the increase in annealing temperature of the films.
机译:通过使用电子束的真空蒸发法,在镍基合金基底上开发了二氧化铈稳定的氧化锆(CSZ)薄膜。在不同温度下热处理的薄膜的X射线衍射(XRD)分析表明单斜晶相稳定。在300-1100 nm波长范围内,在不同温度下退火的薄膜的透射测量结果表明,薄膜的带隙能量介于3.6和3.8 eV之间。发现膜的折射率随着退火温度的升高而增加。膜的显微硬度随着退火温度的升高而非线性地增加,这表明膜的硬度有所提高。 CSZ涂层基板的热导率研究显示,随着退火温度的升高,非线性降低。 CSZ薄膜的表面研究证实,随着薄膜退火温度的升高,晶粒尺寸增加,表面粗糙度降低。

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