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机译:具有异堆源配置的L形栅极隧道FET的RF特性和电噪声分析的影响
Department of Electronics and Communication Engineering National Institute of Technology Silchar India;
Department of Electronics and Communication Engineering National Institute of Technology Silchar India;
Department of Electronics and Communication Engineering National Institute of Technology Silchar India;
hetero-stacked source; L-shaped gate TFET; noise analysis; RF characteristics; temperature dependence;
机译:口袋掺杂L形栅极隧道FET的RF分析和温度表征
机译:用δP+ SiGe袋层计数背栅偏置对延伸源隧道FET(ESTFET)性能影响的影响
机译:界面固定电荷对袋掺杂双闸隧道FET电气特性的影响
机译:用SiO
机译:单轴应变对MOSFET和Esaki隧道二极管的电气特性的影响。
机译:CT灌注成像的噪声特征:噪声如何从源图像传播到最终的灌注图?
机译:一种新的HFET温度噪声模型,特别强调栅极漏电流,并研究等效噪声源的偏置依赖性
机译:风洞研究空气动力学性能,稳定的振动载荷,表面温度和大型双引擎上表面吹气喷射襟翼配置的声学特性