Analytical modeling of AlInSb/InSb MOS gate HEMT structure with improved performance

摘要

The performance of AlInSb/InSb heterostructure with various parameters is considered with T-Cad simulation. As the heterojunctions are having more advantageous properties that is a real support for so many application such as solar cells, semiconductor cells and transistors. Special properties of semiconductors are discussed here with various parameters that are depending up on the performance of accurate device [Pardeshi H., Pati S. K., Raj G., Mohankumar N., Sarkar C. K., J. Semicond. 33(12):124001-1-124001-7, 2012]. The maximum drain current density is achieved with improving the density of two-dimensional electron gas (2DEG) and with high velocity. High electron mobility transistor (HEMT) structure is used with the different combinations of layers which have different bandgaps. Parameters such as electron mobility, bandgap, dielectric constant, etc., are considered differently for each layer [Zhang A., Zhang L., Tang Z., IEEE Trans. Electron Devices 61(3):755-761, 2014]. The high electron mobility electrons are now widely used in so many applications. The proposed work of AlInSb/InSb heterostructure implements the same process which will be a promise for future research works.