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Effect of defects and dopants in graphene on hydrogen interaction in graphene-supported NaAlH_4

机译:石墨烯中的缺陷和掺杂剂对石墨烯负载的NaAlH_4中氢相互作用的影响

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Carbon-based materials have attracted great attention over the past few years due to their role as a support for sodium alanate improving the kinetics of H_2 release/uptake. Herein, we used graphene with defects and various dopants to simulate the carbon materials and performed a periodic density functional theory study on the impact of the modifications in the graphene substrates on the hydrogen interaction in, and hydrogen desorption from, the highly dispersed sodium alanate. Our results showed that the impact of various defects and dopants can be categorized in groups: (i) Pristine graphene and pentagon-heptagon (5-7) pairs defective graphene, as well as N- and S-doped graphene substrates show a weak interaction with the supported sodium alanate cluster, as reflected in the geometry change of the supported cluster and charge transfer between the supported cluster and the substrate. These defects and dopants do not promote H_2 formation and desorption. (ii) Carbon vacancies, as well as B and Cl dopants, cause instantaneous H_2 formation in supported NaAlH_4 upon relaxation, (iii) O-, P-, F- and OH-doped graphene substrates led to the formation of a meta-stable di-hydrogen state with a H-H distance of ~0.96 A. There is an activation barrier between the meta-stable di-hydrogen state and the most stable state with H_2 being formed. Furthermore, our results with the optB88-vdW functional show that van der Waals interaction strengthens the binding of the cluster on the substrates by 0.9-1.4 eV over the PBE results but does not alter the relative stability of the system.
机译:碳基材料在过去几年中引起了极大的关注,这是由于它们作为丙二酸钠的支持物,可改善H_2释放/吸收的动力学。在本文中,我们使用具有缺陷和各种掺杂剂的石墨烯来模拟碳材料,并进行了周期性密度泛函理论研究,研究了石墨烯底物的修饰对高度分散的铝酸钠中氢相互作用和氢解吸的影响。我们的结果表明,各种缺陷和掺杂剂的影响可分为以下几类:(i)原始石墨烯和五边形-七边形(5-7)对有缺陷的石墨烯,以及N和S掺杂的石墨烯衬底显示出较弱的相互作用负载的铝酸钠簇具有电荷,这反映在负载簇的几何形状变化以及负载簇和基底之间的电荷转移上。这些缺陷和掺杂剂不会促进H_2的形成和解吸。 (ii)碳空位以及B和Cl掺杂剂在弛豫时会在负载的NaAlH_4中瞬间形成H_2,(iii)O-,P-,F-和OH掺杂的石墨烯基底导致亚稳态的形成HH距离为〜0.96 A的二氢态。在亚稳定的二氢态和最稳定的状态(形成H_2)之间存在激活障碍。此外,我们的optB88-vdW功能性结果显示,范德华相互作用比PBE结果增强了0.9-1.4 eV的底物上簇的结合,但并未改变系统的相对稳定性。

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