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首页> 外文期刊>International Journal of Heat and Mass Transfer >An inverse heat transfer method to provide near-isothermal surface for disc heaters used in microlithography
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An inverse heat transfer method to provide near-isothermal surface for disc heaters used in microlithography

机译:一种反向传热方法,可为微光刻中的盘式加热器提供接近等温的表面

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摘要

In microlithography, the fabrication method for semiconductors and MEMS devices, the post-exposure baking process involves the baking (heating) of a 300 mm diameter, ~1 mm thick silicon wafer substrate with a disc heater to a set point temperature (T{sub}(SET)) triggering the photo-chemical reaction undergone by the photo-resist applied on the wafer. For a known loss occurring due to the convection boundary conditions at the top and side of the disc heater surface, providing a steady state heat power (Q{sub}T, W) as a constant heat flux (q", W/m{sup}2) over the heater bottom surface (A, m{sup}2) would result in a fixed temperature difference ΔT(=T{sub}(MAX) - T{sub}(MIN)) on the heater top surface. Minimizing this heater surface ΔT - an imprint of which is transferred to the heated wafer - is crucial for determining the accuracy of the semiconductor circuit pattern etched on the silicon wafer. To reduce this ΔT further (ΔT → ΔT{sub}(MIN)) for identical steady state heat power Q{sub}T, a cost-effective method of two-zone redistribution of the heater bottom surface heat fluxes (two heat fluxes q"{sub}1 and q"{sub}2 given, respectively, to the inner and the outer-zones) is proposed. This inverse heat transfer problem in steady state is verified using numerical methods and scaling analysis from first principles. For given convection heat losses and T{sub}(SET), the achievable heater surface ΔT{sub}(MIN) decreases as the split radius increases. Also, there exists a critical split radius (r{sub}c) below which no energy need be given to the inner-zone to achieve ΔT{sub}(MIN) (i.e., q"{sub}1 = 0). This r{sub}c value is predicted using the theoretical scaling analysis and was found to match excellently with the value obtained from numerical methods. The variations of heater surface ΔT, q"{sub}1/q"{sub}2, and r{sub}c were found to be independent of the T{sub}(SET) and dependent only on the heat losses, Limiting values of achievable heater surface ΔT{sub}(MIN) for various split locations dividing the two-zones of heat flux are also presented.
机译:在微光刻技术中,半导体和MEMS器件的制造方法是,曝光后烘烤过程涉及用盘式加热器将直径300 mm〜1 mm厚的硅晶片基板烘烤(加热)到设定温度(T {sub }(SET))触发由施加在晶片上的光刻胶进行的光化学反应。对于由于盘式加热器表面的顶部和侧面的对流边界条件而发生的已知损失,请提供稳定的热功率(Q {sub} T,W)作为恒定的热通量(q“,W / m { sup} 2)在加热器底表面(A,m {sup} 2)上将导致加热器顶表面上的温度差ΔT(= T {sub}(MAX)-T {sub}(MIN))固定。最小化加热器表面的ΔT(其压印已转移到加热的晶圆上)对于确定蚀刻在硅晶圆上的半导体电路图案的精度至关重要,要进一步降低该ΔT(ΔT→ΔT{sub}(MIN))对于相同的稳态热功率Q {sub} T,一种经济高效的加热器底面热通量的两区再分配方法(分别给出两个热通量q“ {sub} 1和q” {sub} 2,在内部和外部区域的热传递逆向问题是通过数值方法和第一原理的比例分析来验证的。在损耗和T {sub}(SET)时,可实现的加热器表面ΔT{sub}(MIN)随着裂隙半径的增加而减小。而且,存在一个临界分割半径(r {sub} c),在该临界分割半径以下,不需要向内部区域施加任何能量来实现ΔT{sub}(MIN)(即q“ {sub} 1 = 0”)。 r {sub} c值是使用理论比例分析法进行预测的,并且与通过数值方法获得的值非常匹配。加热器表面的变化量ΔT,q“ {sub} 1 / q” {sub} 2和r发现{sub} c与T {sub}(SET)无关,并且仅取决于热损失。对于将两个区域的热量分开的各个分割位置,可达到的加热器表面的极限值ΔT{sub}(MIN)通量也被提出。

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