机译:从头算热辐射特性:半导体GaAs
School of Mechanical Engineering, Birck Nanotechnology Center, and Energy Center, Purdue University, West Lafayette, IN 47907-2088, USA;
School of Mechanical Engineering, Birck Nanotechnology Center, and Energy Center, Purdue University, West Lafayette, IN 47907-2088, USA;
GaAs; radiation; ab initio calculation;
机译:AB初始敏感性和A(GaAs)(1)/(ALAS)(1)超晶格的热特性计算,并将其与Ga0.5Al0.5as合金进行比较
机译:Co_2 MnSi /半导体(SC,= GaAs,Ge)异质结构的从头算
机译:从头算的MZN(2)(M = Be,Mg; Z = C,Si)黄铜矿半导体的结构,电子和弹性性质
机译:AB Initio基于SiC稀释磁半导体磁性的计算
机译:半导体表面和分子簇的AB Initio计算
机译:从头算计算InGaAsN锌矿中四元化合物的压力诱导形成和In-N分布
机译:从头计算结构,电子和弹性 mZN2(m = Be,mg; Z = C,si)黄铜矿半导体的特性
机译:半导体应力:si,Ge和Gaas的ab-Initio计算