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首页> 外文期刊>International Journal of Heat and Mass Transfer >Effect of crucible and crystal rotations on the solute distribution in large size sapphire crystals during Czochralski growth
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Effect of crucible and crystal rotations on the solute distribution in large size sapphire crystals during Czochralski growth

机译:坩埚和晶体旋转对切克劳斯基生长过程中大尺寸蓝宝石晶体中溶质分布的影响

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In this study, the flow, temperature and solute concentration fields in the melt during the CZ growth process are numerically investigated. The results show that the magnitude and distribution of the solute concentration in the melt is strongly affected by the convective flow and thermal distribution. The maximum solute concentration always occurs at the crucible sidewall where the maximum temperature in the melt is found and the solute concentration at the crystal-melt interface increases from the triple point to the centerline. Heat transport from the side crucible wall towards the crystal-melt interface is enhanced by the crucible rotation. The level of the solute concentration inside the melt is reduced due to the lowering of the maximum temperature at the crucible wall. As a consequence, the distribution of the solute concentration along the crystal-melt interface becomes smaller and more uniform as the crucible rotation rate increases. However, after the crucible rotation rate becomes large enough, the maximum solute concentration and the solute concentration along the crystal-melt interface start to increase. Heat transport inside the melt is also affected by the crystal rotation. The centrifugal force induced by the crystal rotation generates a vortex below the crystal-melt interface. This vortex gets larger and stronger as the crystal rotation rate increases. In the smaller crystal rotation rate regime, this vortex is very small, suppressing the solute concentration at the crystal-melt interface. Therefore, the solute concentration along the crystal-melt interface becomes less when the crystal rotation rate is higher, although there is an increase in the maximum solute concentration in the melt due to the higher maximum temperature. In the higher crystal rotation rate regime, there is a reduction in the convexity of the crystal-melt interface due to enhancement of heat transport from the bottom wall of the crucible by vortex motion under the crystal-melt interface. Therefore, there is a switch to an increase in the transport of solute impurities into the crystal-melt interface. Hence, the solute concentration along the crystal-melt interface increases as the crystal rotation rate increases. However, with a further increase in the crystal rotation rate, as the shape of the crystal-melt interface changes becoming concave towards the melt, the solute concentration along the crystal-melt interface decreases because the maximum temperature is significantly reduced. In this study, both counter- and iso-rotations are considered. The results of a comparison of the cases of iso- and counter- crystal rotation show that the lowest and most uniform solute distribution along the crystal-melt interface is achieved when there is no crystal rotation and the crucible rotation rate is fixed at 1 rpm. In other words, the lowest and most uniform solute concentration can be achieved with the only crucible rotation.
机译:在这项研究中,对CZ生长过程中熔体中的流动,温度和溶质浓度场进行了数值研究。结果表明,熔体中溶质浓度的大小和分布受对流和热分布的强烈影响。最大溶质浓度始终出现在坩埚侧壁上,在该处发现了熔体中的最高温度,并且晶体-熔体界面处的溶质浓度从三点到中心线增加。坩埚旋转增强了从侧面坩埚壁向晶体熔体界面的热传输。由于坩埚壁上的最高温度降低,熔体内部的溶质浓度降低。结果,随着坩埚旋转速度的增加,沿晶体-熔体界面的溶质浓度分布变得更小且更均匀。但是,在坩埚旋转速度足够大之后,最大溶质浓度和沿熔体-熔体界面的溶质浓度开始增加。熔体内部的热传递也受晶体旋转的影响。晶体旋转引起的离心力在晶体-熔体界面下方产生涡旋。随着晶体旋转速度的增加,这个漩涡变得越来越大。在较小的晶体旋转速率范围内,该涡旋非常小,从而抑制了晶体与熔体界面的溶质浓度。因此,尽管由于较高的最高温度导致熔体中的最大溶质浓度增加,但是当晶体旋转速率较高时,沿着熔体-熔体界面的溶质浓度变小。在较高的晶体旋转速率状态下,由于通过在熔体-熔体界面下的涡旋运动而提高了从坩埚底壁的传热,从而使熔体-熔体界面的凸度降低。因此,需要增加溶质杂质向晶体熔体界面的传输。因此,沿着晶体-熔体界面的溶质浓度随着晶体旋转速率的增加而增加。然而,随着晶体旋转速度的进一步增加,随着晶体-熔体界面的形状改变成朝向熔体凹入,沿着晶体-熔体界面的溶质浓度降低,因为最高温度显着降低。在这项研究中,考虑了反向旋转和等向旋转。对等晶体和反晶体旋转情况的比较结果表明,当没有晶体旋转且坩埚旋转速度固定在1 rpm时,沿晶体-熔体界面的溶质分布最低且最均匀。换句话说,仅通过坩埚旋转就可以实现最低和最均匀的溶质浓度。

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