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Evaluation of Changes in Dislocation Density in TI-CP2 in the Process of Quasi-Static Loading Using Electrical Resistance Measurements

机译:利用电阻测量评估TI-CP2在准静态载荷过程中位错密度的变化

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摘要

The paper focuses on the development of new methodology to evaluate increase of dislocation density in metals using electrical resistance measurements. Titanium specimens have been quasi-statically loaded with Instron testing machine till fracture and electrical resistance of the specimens have been monitored during the tests. Dislocation density was recovered from electrical resistance measurements and from SEM images before and after loading. Thus obtained results are shown to be in good agreement. The methodology developed in the present paper may be used for accurate monitoring of dislocation density in-situ.
机译:本文着重于开发利用电阻测量评估金属中位错密度增加的新方法。用Instron测试仪准静态加载钛样品,直到在测试过程中监测样品的断裂和电阻。从加载之前和之后的电阻测量和SEM图像中恢复位错密度。这样获得的结果显示出很好的一致性。本文开发的方法可用于精确监测位错密度。

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