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A fully integrated multi-band ED-mode pHEMT VCO using variable transformer and switched resonator

机译:使用可变变压器和开关谐振器的全集成多频带ED模式pHEMT VCO

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A systematic approach to the design of a reconfigurable LC-coupled voltage-controlled oscillator (VCO) is proposed in this article. The focus is on the choice of the reactive elements of the resonance tank which are most suitable to switch to the desired oscillation frequencies. The optimum Q of the tank will be determined by the selected component. We report a 0.5-μm enhancement-depletion (ED) mode pHEMT (HEMT, high-electron mobility transistor) multiple-frequency VCO, and the generation of multiple frequencies are achieved using switched resonator topology. LC-tank circuit is built by square transformers. By careful selection of the reactive elements, evenly distributed results showed at each designed band. The multi-band ED-mode pHEMT VCO showed the output power of -4.7 dBm for 2 GHz band, -6.67 dBm for 3.86 GHz band and —5.9 dBm for 4.5 GHz band, respectively. The phase noises at 1 MHz offset frequency from carrier were —112.8 dBc/Hz for 2 GHz, — 105dBc/Hz for 3.86 GHz and -103.3 dBc/Hz for 4.5 GHz, respectively. The total chip size is only 1.17×0.83 mm~2.
机译:本文提出了一种系统设计可重构LC耦合压控振荡器(VCO)的方法。重点是选择最适合切换到所需振荡频率的谐振箱的电抗元件。储罐的最佳Q将由所选组件确定。我们报告了一个0.5μm的增强耗尽(ED)模式pHEMT(HEMT,高电子迁移率晶体管)多频VCO,并且使用开关谐振器拓扑结构实现了多频的产生。 LC储罐电路由方形变压器构建。通过仔细选择反应性元素,可以在每个设计频段显示均匀分布的结果。多频段ED模式pHEMT VCO在2 GHz频段上显示为-4.7 dBm,在3.86 GHz频段上显示为-6.67 dBm,在4.5 GHz频段上显示为-5.9 dBm。载波偏离频率为1 MHz时的相位噪声对于2 GHz为–112.8 dBc / Hz,对于3.86 GHz为– 105dBc / Hz,对于4.5 GHz为-103.3 dBc / Hz。芯片总尺寸仅为1.17×0.83 mm〜2。

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