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APseudo 12-bits 8,33MS/s Charge Redistribution Successive-Approximation ADC in CMOS 65nm for Image Sensors

机译:用于图像传感器的CMOS 65nm APseudo 12位8,33MS / s电荷重新分配逐次逼近ADC

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摘要

A new charge redistribution Successive Approximation A-D Converter (SA ADC) potentially suitable for array implementation in CMOS Imagers is presented. The performances achieved exceed the performances of the actual sensors in terms of both resolution and image quality. The reached sampling rate is more than sufficient for mobile applications (30fps for a pixel array of 5Megapixels). The converter is designed in CMOS 65nm technology and the low power constraints have been respected, the consumed silicon area was optimized in order to fit into the actual sensors die size with no major changes affecting the other blocks, thus this new conversion system will be readily usable in image sensors of next generation with pitches less than or equal to 1.1 urn.
机译:提出了一种新的电荷重新分配逐次逼近型A-D转换器(SA ADC),它可能适用于CMOS成像器中的阵列实现。在分辨率和图像质量方面,所达到的性能都超过了实际传感器的性能。达到的采样率已足够用于移动应用程序(5Megapixels像素阵列为30fps)。该转换器采用CMOS 65nm技术设计,并考虑到了低功耗限制,对消耗的硅面积进行了优化,以适应实际的传感器芯片尺寸,而不会对其他模块造成重大影响,因此这种新的转换系统将很容易使用可用于间距小于或等于1.1微米的下一代图像传感器。

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