On the impulse circuit model for the single-electron tunnelling junction

摘要

In this paper, the impulse circuit model for the single-electron tunnelling (SET) junction is discussed. Starting from well-known results of the so-called orthodox theory of single electronics, an equivalent circuit for the single-electron tunnelling junction is 'derived' by examining the behaviour of simple circuits including a SET junction. In the impulse circuit model, the electron tunnelling event is basically implemented by an impulsive current source with value eδ(t — t_0), which absorbs exactly the energy delivered by the sources that is not stored in the circuit. The equivalent circuit consisting of a charged capacitor in parallel with the impulsive current source does not contain a tunnel resistance, and the critical voltage is expressed in only local parameters. The impulse model is suitable for implementation in a circuit simulator; results of a SPICE simulation of the single-electron pump are shown.