首页> 外文期刊>International journal of circuit theory and applications >Low-voltage bulk-driven input stage with improved transconductance
【24h】

Low-voltage bulk-driven input stage with improved transconductance

机译:低压大容量驱动的输入级,具有改善的跨导

获取原文
获取原文并翻译 | 示例
           

摘要

A low-voltage input stage constructed from bulk-driven PMOS transistors is proposed in this paper. It is based on a partial positive feedback and offers significant improvement of both input transconductance and noise performance compared with those achieved by the corresponding already published bulk-driven structures. The proposed input stage offers also extended input common-mode range under low supply voltage in relevant to a gate-driven differential pair. A differential amplifier based on the proposed input stage is also designed, which includes an auxiliary amplifier for the output common-mode voltage stabilization and a latch-up protection circuitry. Both input stage and amplifier circuits were implemented with 1V supply voltage using standard 0.35 urn CMOS process, and their performance evaluation gave very promising results.
机译:本文提出了一种由体驱动PMOS晶体管构成的低压输入级。它基于部分正反馈,与相应的已发布的批量驱动结构相比,输入跨导和噪声性能得到了显着改善。拟议的输入级还提供了与栅极驱动差分对有关的低电源电压下的扩展输入共模范围。还设计了一种基于建议的输入级的差分放大器,该差分放大器包括用于输出共模电压稳定的辅助放大器和闩锁保护电路。输入级和放大器电路均采用标准的0.35微米CMOS工艺在1V电源电压下实现,其性能评估给出了非常有希望的结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号