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首页> 外文期刊>International journal of antennas and propagation >Low-Profile Repeater Antenna with Parasitic Elements for On-On-Off WBAN Applications
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Low-Profile Repeater Antenna with Parasitic Elements for On-On-Off WBAN Applications

机译:具有寄生元件的薄型中继天线,用于开-关WBAN应用

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摘要

A low-profile repeater antenna with parasitic elements for on-on-off WBAN applications is proposed. The proposed antenna consists of a planar inverted-F antenna (PIFA), two parasitic elements, and a ground plane with a slot. Due to the slot, the impedance matching of the resonance formed by the PIFA is improved, which makes the proposed antenna operate in the 5.8 GHz industrial, scientific, and medical (ISM) band. To cover the 5.2 GHz wireless local area network (WLAN) band, a dual resonance characteristic is realized by the slot and the two parasitic elements. The first coupling between the PIFA and the slot not only makes the slot operate as a resonator, but also forms secondary coupling between the slot and the two parasitic elements. The two parasitic elements operate as an additional resonator due to secondary coupling. The antenna has the enhanced near surface radiation in the 5.8 GHz ISM band due to addition of the slot and radiation toward off-body direction in the 5.2 GHz WLAN band. In order to evaluate antenna performance considering the human body effect, the antenna characteristics on a human equivalent phantom are analyzed.
机译:提出了一种用于开关型WBAN应用的带有寄生元件的薄型中继天线。拟议中的天线由一个平面倒F天线(PIFA),两个寄生元件和一个带缝隙的接地平面组成。由于存在缝隙,PIFA形成的谐振的阻抗匹配得到改善,从而使拟议的天线在5.8 GHz工业,科学和医学(ISM)频段工作。为了覆盖5.2 GHz无线局域网(WLAN)频段,插槽和两个寄生元件实现了双重谐振特性。 PIFA和狭槽之间的第一耦合不仅使狭槽起谐振器的作用,而且在狭槽和两个寄生元件之间形成次级耦合。由于次级耦合,两个寄生元件用作附加谐振器。由于增加了缝隙和朝向5.2 GHz WLAN频带的离体方向的辐射,该天线在5.8 GHz ISM频带具有增强的近表面辐射。为了评估考虑人体影响的天线性能,分析了人体等效体模上的天线特性。

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  • 来源
    《International journal of antennas and propagation》 |2016年第1期|4743207.1-4743207.8|共8页
  • 作者单位

    Hanyang Univ, Dept Elect & Commun Engn, 222 Wangsimni Ro, Seoul 133791, South Korea;

    Hanyang Univ, Dept Elect & Commun Engn, 222 Wangsimni Ro, Seoul 133791, South Korea;

    Hanyang Univ, Dept Elect & Commun Engn, 222 Wangsimni Ro, Seoul 133791, South Korea;

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  • 正文语种 eng
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