Influence of Oxygen Pressure on Structures and Electrical Properties of Lead-free (K_0.44Na_0.52Li_0.04)(Nb_0.86Ta_0.10Sb_0.04)O₃ Thin Films Deposited by Pulsed Laser Deposition

摘要

Lead-free ferroelectric (K_0.44Na_0.52Li_0.04)(Nb_0.86Ta_0.10Sb_0.04)O₃ thin films have been prepared by pulsed laser deposition. The structures, morphologies and electrical properties of the thin films have been investigated as a function of oxygen pressure from 10 Pa to 40 Pa. The oxygen pressure plays an important role on the thin films. The crystallization and [001] preferential orientation of the thin films increase with oxygen pressure. The thin film deposited at 30 Pa exhibits the moderate dielectric constant of 1330 at 1? kHz and a well-defined ferroelectric hysteresis loop with the remnant polarization of 8.45? ??C/cm2 and the coercive field of 27.1? kV/cm.View full textDownload full textKeywordsLead-free potassium sodium niobate, Thin films, Pulsed laser deposition, Dielectric and ferroelectric propertiesRelated var addthis_config = { ui_cobrand: "Taylor & Francis Online", services_compact: "citeulike,netvibes,twitter,technorati,delicious,linkedin,facebook,stumbleupon,digg,google,more", pubid: "ra-4dff56cd6bb1830b" }; var addthis_config = {"data_track_addressbar":true,"ui_click":true}; Add to shortlist Link Permalink http://dx.doi.org/10.1080/10584587.2012.735890