Thermal performance of CMOS-SOI transistors from weak to strong inversion

摘要

A promising solution to continue the complementary metal-oxide semiconductor (CMOS) scaling roadmap at the 22 nm technology node and beyond is CMOS-silicon on insulator (SOI), which is used especially in low-power and "system on chip" applications [1]. CMOS-SOI involves building conventional MOSFETs on very thin layers of crystalline silicon. The thin layer of silicon is separated from the substrate by a thick layer of buried SiO₂ film, thus isolating the devices from the underlying silicon substrate and from each other. CMOS-SOI technology is already a leading technology in a wide range of applications where integrated CMOS-SOI-microelectromechanical systems or nanoelectromechanical systems (MEMS/NEMS) technologies provide unique sensing systems for IR and terahertz (THz) imagers.