Preparation and Characterization of Sn-BSTS Topological Insulator for Universality Test of the Quantum Hall Effect

摘要

Single crystals of Sn0.02Bi1.08Sb0.9Te2S are grown and their transport properties are evaluated to precisely measure the quantum Hall effect on the metallic surface state of the topological insulator. The temperature dependence of the electrical resistance of the bulk samples is determined. The conduction in the material is explained by the parallelism of the inner bulk conduction and the metallic surface conduction. At low temperatures, surface conduction is the dominant one of the two. In order to measure thinner flakes of the material with an appropriate charge carrier control, the material is processed into measurement devices with the conventional lithography method. Device evaluation is also introduced.