Characterization of diode detectors used in six-port reflectometers

摘要

A method for characterizing in situ the diodes used as power detectors in six-port network analyzers is presented. The method requires only two unknown loads which are connected at the measurement ports. Measurement results obtained for one-port and two-port devices with a dual six-port realized in the 2-18-GHz frequency range are reported. In order to show the influence of frequency, these results are compared to those obtained using a midband characterization of the diode detectors.