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首页> 外文期刊>IEEE Transactions on Instrumentation and Measurement >Optical Phase Detection Method for Measurements and Calibration of Pockels Cell-Based Sensors
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Optical Phase Detection Method for Measurements and Calibration of Pockels Cell-Based Sensors

机译:光学相位检测方法,用于测量和校准Pockels基于细胞的传感器

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摘要

Nowadays, the most successful optical technique developed for measuring high voltages in 50-/60-Hz electric power lines utilizes the bulk lithium niobate Pockels cell, constituting the so-called optical voltage sensor (OVS). However, unlike the area of vibrometry, where there are ISO standards based on reliable and simple interferometric methods for calibrating the sensors, there is still no standardized procedure for measuring V-pi (half-wave voltage) of Pockels cells or for calibrating OVSs. As the Pockels cell-based OVSs can be considered as a polarimetric interferometer, and inspired by the ISO 16063-41 standard (for the calibration of vibration and shock transducers), specifically the technique called signal coincidence method (SCM), this work presents a new digital and real-time method for optical phase detection tailored for the measurement of V-pi in OVSs. Measurements were made in order to demonstrate the effectiveness of the new technique by applying a voltage signal to the OVS, composed by the superposition of a 60-Hz sinusoidal voltage, with amplitude equal to the reference value of V-pi (4.068 kV in this case) and a dc voltage high enough to provide a 90 degrees bias static phase shift, as specified by SCM, proving that the method can recover the value of V-pi in accordance with the estimated value. However, it is well known that the adjustment of the bias phase in a polarimetric interferometer can undergo undesired variations from time to time, due to drifts in ambient temperature and other external disturbances, taking the OVS out of its optimal operating point and thus not attending the ISO standard. As an advantage, experiments have shown that the new method is tolerant to variations in the 90 degrees bias static phase (ranging from 60 degrees to 120 degrees), as well as to variations in the amplitude of the voltage applied to the OVS, varying +/- 25% in relation to the 4.068-kV reference voltage. The V-pi values were accurately detected, with a maximum percentage error of 0.2% and, therefore, satisfying the specification of the ISO 16063 standard.
机译:如今,开发用于测量50- / 60-Hz电力线中的高电压的最成功的光学技术利用块状铌酸锂穴位细胞,构成所谓的光学电压传感器(OV)。然而,与振动区域不同,在存在基于可靠和简单的干涉方法的ISO标准,用于校准传感器的可靠和简单的干涉方法,仍然没有用于测量孔径电池的V-PI(半波电压)或用于校准OVSS的标准化步骤。由于孔径电池的OVSS可以被认为是极化干涉仪,并且由ISO 16063-41标准(用于振动和冲击传感器的校准),特别是称为信号巧合方法(SCM)的技术,这项工作呈现了一个OVSS中V-PI测量的光学相位检测新的数字和实时方法。通过将电压信号施加到OVS,由60 Hz正弦电压的叠加施加到OV,振幅等于V-Pi的参考值(在此方面,通过将电压信号施加到OV来证明新技术的有效性,以等于V-Pi的参考值(4.068kV外壳)和DC电压足够高,以提供90度偏置静态相移,如SCM所指定,证明该方法可以根据估计值恢复V-PI的值。然而,众所周知,由于环境温度和其他外部干扰的漂移,将OVS从其最佳操作点的偏移漂移,因此偏振干涉仪在极化干涉仪中的偏置阶段的调节可能会发生不希望的变化,从而从最佳操作点脱离OV,从而使OVS出来并因此不参加ISO标准。作为一个优点,实验表明,新方法是耐受90度偏置静态相位的变化(范围为60度至120度),以及施加到OV的电压幅度的变化,改变+ / - 与4.068 kV参考电压有关的25%。精确检测V-PI值,最大百分比误差为0.2%,因此满足ISO 16063标准的规格。

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