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2D ultrasonic arrays with low-voltage operation for high density electronics

机译:用于高密度电子设备的低压操作2D超声波阵列

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The use of ultrasonic array transducers for NDT is growing rapidly, as commercial array controllers become more widely available. However, conventional 1D array designs limit the flexibility of such systems, for example, making it impossible to skew the beam on curved surfaces. As 2D arrays allow 3D beam steering, they are thus of major interest. However, the use of conventional excitation voltages, typically 200 V, with the many elements in 2D arrays may be inconvenient, making investigation of low-voltage operation worthwhile. The work reported here relates to array design for low-voltage operation for NDT. A 1D array was first produced, operating at approximately 1.5 MHz. This was based on a piezocomposite plate made with PZT 5A ceramic and epoxy resin. The plate was bonded to a PCB whose copper tracks defined the array elements, 10 mm long, 0.28 mm wide, and with edge-to-edge separation of 0.4 mm. The device was excited with a standard logic voltage of 3.3 V on a 75 mm-thick aluminium block. The pulse-echo insertion loss, using a signal reflected from the back wall of the aluminium, was found to be 59 dB. A 2D ultrasonic array has also been produced, with 16 elements in a 4 x 4 matrix, using the same piezocomposite material. In this case, the element size is 1.2 mm x 1.2 mm, and the edge-to-edge separation is 0.4 mm. In tests with 3.3 V peak-to-peak excitation voltage, the insertion loss was found to be 73 dB. The results suggest that arrays made with monolithic piezocomposite material have better performance for NDT than previous arrays made with monolithic ceramic and that low- voltage excitation will be viable in practice, with low noise amplification and appropriate signal processing.
机译:随着商用阵列控制器的广泛使用,用于NDT的超声阵列换能器的使用正在迅速增长。然而,常规的一维阵列设计限制了这种系统的灵活性,例如,使得不可能在弯曲表面上倾斜光束。由于2D阵列允许进行3D光束控制,因此引起了人们的极大兴趣。但是,将常规激励电压(通常为200 V)与2D阵列中的许多元素一起使用可能会带来不便,因此值得对低压操作进行研究。此处报道的工作涉及NDT低压运行的阵列设计。首先生产一维阵列,其工作频率约为1.5 MHz。这是基于由PZT 5A陶瓷和环氧树脂制成的压电复合板。将该板粘结到PCB上,PCB的铜迹线定义了阵列元素,长10 mm,宽0.28 mm,边对边间距为0.4 mm。该器件在75 mm厚的铝板上用3.3 V的标准逻辑电压激励。使用从铝的后壁反射的信号,发现脉冲回波插入损耗为59 dB。还使用相同的压电复合材料生产了一个二维超声阵列,在4 x 4矩阵中具有16个元素。在这种情况下,元件尺寸为1.2毫米x 1.2毫米,边缘到边缘的间距为0.4毫米。在使用3.3 V峰峰值激励电压的测试中,发现插入损耗为73 dB。结果表明,用单片压电复合材料制成的阵列比以前用单片陶瓷制成的阵列具有更好的无损检测性能,并且在低噪声激励和适当信号处理的情况下,低电压激励将在实践中可行。

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