NEXT GENERATION GALLIUM NITRIDE POWERS ELECTRONICS

摘要

There are several demands from performance critical applications of today, whichrnneed to be addressed by power electronics vendors. The industry constantlyrnfocuses to deliver products with enhanced power density and high level ofrnreliability, while maintaining the prices at the competitive level. Additionally, therntrend for slick and robust designs and increased functionality presents newrnchallenges to manufacturers/developers of electronic devices from aspects suchrnas miniaturization, integration of additional functions, and reduction in losses.rnIntroduction of novel technologies, such as insulated gate bipolar transistorsrn(IGBTs), enabled addressing the needs of wide range of markets includingrnautomotive, industrial, communication, and consumer electronics. However, asrnsilicon is reaching its theoretical performance levels in terms of materialrnproperties and other factors, devices for efficient conversion and control ofrnelectric energy are required to meet the demands of such markets.rnIn order to address the above said demand issues US-based InternationalrnRectifier has come up with a proprietary technology called as GaN (galliumrnnitride) Technology.