首页> 外文期刊>Inorganic materials >Influence of BaZrO_3, MnCO_3 Additives on Dielectric Properties and Microstructure of Ba(Zn_(1/3)Nb_(2/3))O_3 Ceramics and Ba(Zn_(1/3)Nb_(2/3))O_3-Sr(Zn_(1/3)Nb_(2/3))O_3 Solid Solutions
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Influence of BaZrO_3, MnCO_3 Additives on Dielectric Properties and Microstructure of Ba(Zn_(1/3)Nb_(2/3))O_3 Ceramics and Ba(Zn_(1/3)Nb_(2/3))O_3-Sr(Zn_(1/3)Nb_(2/3))O_3 Solid Solutions

机译:BaZrO_3,MnCO_3添加剂对Ba(Zn_(1/3)Nb_(2/3))O_3陶瓷和Ba(Zn_(1/3)Nb_(2/3))O_3-Sr(Zn_ (1/3)Nb_(2/3))O_3固溶体

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摘要

The effect of BaZrO_3, MnCO_3 additives on the dielectric properties, sintering temperature and microstructure of Ba(Zn_(1/3)Nb_(2/3))O_3 (BZN) and Ba(Zn_(1/3)Nb_(2/3))O_3- Sr(Zn_(1/3)Nb_(2/3))O_3 (BSZN) ceramics was studied in this paper. It indicates that both BaZrO_3 and MnCO_3 can lower the sintering temperature of the ceramics and accelerate the crystallization of BZN and BSZN. The dielectric constant ε_r increases after MnCO_3 added, but decreases when BaZrO_3 added alone. The existence of MnCO_3 can modulate the temperature coefficient of capacitance τ_c toward positive, while BaZrO_3, can make c more negative. MnCO_3 and BaZrO_3 can restrain the appearance of the second phase; while BaZrO_3, can prevent the appearance of the superstructure. In the BSZN system, when 1 mass % MnCO_3 added, sintering temperature(t_s) is lowered to 1240℃. In this study, the best sample that has the excellent properties is sample 5 with dielectric properties of ε_r= 43.6, τ_c =-8×10~(-6)℃~(-1) and tan δ = 0.6×10~(-4) (1 MHz). The sintering temperature of BZN and BSZN system can be lowered to less than 1300℃.
机译:BaZrO_3,MnCO_3添加剂对Ba(Zn_(1/3)Nb_(2/3))O_3(BZN)和Ba(Zn_(1 / 3_Nb_(2/3))的介电性能,烧结温度和微观结构的影响))研究了O_3- Sr(Zn_(1/3)Nb_(2/3))O_3(BSZN)陶瓷。表明BaZrO_3和MnCO_3均可降低陶瓷的烧结温度,并加速BZN和BSZN的结晶。添加MnCO_3后,介电常数ε_r增加,但是单独添加BaZrO_3时,介电常数ε_r降低。 MnCO_3的存在可以使电容τ_c的温度系数朝正方向调制,而BaZrO_3可以使c更加负。 MnCO_3和BaZrO_3可以抑制第二相的出现。而BaZrO_3可以防止上部结构的出现。在BSZN系统中,当添加1质量%的MnCO_3时,烧结温度(t_s)降低到1240℃。在这项研究中,具有优异性能的最佳样品是样品5,其介电性能为ε_r= 43.6,τ_c= -8×10〜(-6)℃〜(-1)和tanδ= 0.6×10〜(- 4)(1 MHz)。 BZN和BSZN体系的烧结温度可以降低到1300℃以下。

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  • 来源
    《Inorganic materials》 |2010年第1期|85-90|共6页
  • 作者

    Feng Shi;

  • 作者单位

    College of Physics and Electronics, Shandong Normal University, Jinan, 250014, P.R. China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-17 13:13:04

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