Evaluation of modern power semiconductor devices and future trends of converters

摘要

The author reviews the modern power semiconductor devices that appeared in the 1980s, i.e., the insulated gate bipolar transistor (IGBT), static induction transistor (SIT), static induction thyristor (SITH), and the recently introduced MOS-controlled thyristor (MCT). The characteristics of these devices are discussed and compared from the viewpoint of power electronics applications. Although the IBGT is well known, the power electronics community is somewhat unfamiliar with the latter three devices. For completeness, a brief review of other power devices, such as the thyristor, triac, gate turn-off thyristor (GTO), bipolar transistor (BJT), and power MOSFET is also incorporated. Future trends are outlined.