Design and Comparison of 4-kV Neutral-Point-Clamped, Flying-Capacitor, and Series-Connected H-Bridge Multilevel Converters

摘要

This paper describes the design of a (4-kV, 4.16-MVA) three-level neutral-point-clamped-, three-level flying-capacitor-, four-level flying-capacitor-, and nine-level seriesconnected H-bridge voltage-source converter on the basis of state-of-the-art 6.5-, 4.5-, 3.3- and 1.7-kV insulated gate bipolar transistors. The semiconductor loss distribution and the design of semiconductors and passive components are compared for a medium switching frequency assuming a constant converter efficiency of about 99%. To evaluate the converter characteristics in high switching frequency applications, a second comparison is realized for the maximum switching frequencies assuming a constant expense of semiconductors in all converters.