Static and Dynamic Characterization of 6.5-kV 100-A SiC Bipolar PiN Diode Modules

摘要

High-voltage and high-current SiC bipolar diode modules are fabricated and characterized under static and dynamic conditions. The modules are built using $6 times 6 hbox{mm}^{2}$ SiC chips that are fabricated on 3-in SiC substrates. Individual chips were also packaged in an ISOPLUS™ package and used to perform switching tests on the diodes. The modules have been fully characterized under static and dynamic conditions. These modules are targeted for high-voltage high-frequency applications as well as antiparallel diodes for 6.5-kV insulated gate bipolar transistors, insulated gate commutated thyristors, and injection enhanced insulated gate bipolar transistors.