Integrated Modular Motor Drive Design With GaN Power FETs

摘要

This paper explores the use of GaN power FETs to realize an integrated modular motor drive (IMMD) with an induction motor. A structure in which inverter modules are connected in series is proposed to reduce the module maximum voltages and to offer an opportunity to utilize low-voltage wide-band-gap GaN devices. With the superb switching performance of GaN power FETs, a reduction in IMMD size is achieved by eliminating inverter heat sink and optimizing dc-link capacitors. Gate signals of the IMMD modules are interleaved to suppress the total voltage ripple of dc-link capacitors and to further reduce the capacitor size. Motor winding configurations and their coupling effect are also investigated as a part of the IMMD design. The proposed structure and design methods are verified by experimental results.