机译:低电感功率模块封装中的SiC沟道MOSFET的特性
Power Electronics and Electric Machinery Center Oak Ridge National Laboratory Knoxville TN USA;
Department of Electrical Engineering and Computer Science The University of Tennessee Knoxville TN USA;
Power Electronics and Electric Machinery Center;
MOSFET; Silicon carbide; Multichip modules; Temperature; Switches; Logic gates; Inductance;
机译:具有第2代SIC沟槽栅极MOSFET的全SIC模块
机译:All-SiC模块配有SiC Trench栅极MOSFET
机译:3.3-kV全版本模块,带有沟槽栅极MOSFET用于配电设备
机译:开发用于高频应用的低电感SiC沟槽MOSFET电源模块
机译:6H-αSiC的热氧化电钝化及其表征和在SiC MOSFET中的应用。
机译:用于弹电模块包装的非线性电导率环氧/ SIC复合材料:制造表征和应用
机译:扇出面板级PCB嵌入式SIC电源MOSFET包装