Comparing Si and SiC Diode Performance in Commercial AC-to-DC Rectifiers With Power-Factor Correction

摘要

Improvements in power electronics are basically the result of research in two main fields, namely: 1) new topologies and 2) new devices. Researchers' efforts to achieve improved topologies are necessarily limited by the characteristics of the devices. As a result, both topologies and devices must move forward jointly and at same time. This letter studies the impact of silicon carbide diodes on a classic structure of power-factor correction-the boost converter.