Deposition and Characterization of CVD-Tungsten and Tungsten Carbonitrides on (100) Si

摘要

Two different precursors were used to deposit W films on Si-W(CO)_6 and WCl_6. By pyrolytic decomposition of W(CO)_6 at 400℃ in argon atmosphere W thin films with well-expressed textured structure were deposited on (100)Si substrates. By hydrogen reduction of WCl_6 at 750℃ in Ar, polycrystalline W films were deposited. By the carbonyl process and in the presence of ammonia and acetone, WC_xN_y thin films were obtained. Reflection High Energy Electron Diffraction (RHEED) method was used for structural characterization of the films. Temperature dependence of the electrical resistance of the films in the range 4.2-300 K was studied and the results are discussed in terms of films structure and composition.