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Effect of electron-phonon interaction and temperature dependence of resistivity in some heavy fermion systems

机译:重质费米子体系中电子-声子相互作用和电阻率温度依赖性的影响

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摘要

Here we have considered the electron-phonon interaction in the Periodic Anderson Model (PAM) to describe the temperature dependence of resistivity in some heavy fermion (HF) systems. Since the resistivity is related to the imaginary part of the electron self energy, the expression of the same is evaluated from electron Green function by the double time temperature dependant Green function technique of the Zubarev type. In order to understand the effect of electron-phonon interaction in these systems, we couple the phonons to both the f-electrons as well as to the electrons of the hybridization band of both conduction and f-electrons. The influence of various model parameters, namely, the position of 4f level E 0, the electron-phonon coupling strengths f 1(q) and f 2(q), the effecting coupling strength g = N(0)γ 02/ω 0 have been studied on the temperature dependence of resistivity in HF systems. The numerical analysis is performed for q = 0 and for finite temperature in the static limit. The analysis of the results gives satisfactorily in comparison to the experimental observations.
机译:在这里,我们已经考虑了周期性安德森模型(PAM)中的电子-声子相互作用来描述某些重费米子(HF)系统中电阻率的温度依赖性。由于电阻率与电子自能的虚部有关,因此,通过与祖巴列夫类型有关的时间依赖于格林函数的两倍时间的电子格林函数来评估电阻率的表达式。为了了解电子-声子相互作用在这些系统中的作用,我们将声子既耦合到f电子,又耦合到导电电子和f电子的杂化带中的电子。 4f能级E 0 的位置,电子-声子耦合强度f 1 (q)和f 2 (q),研究了影响耦合强度g = N(0)γ 0 2 0 HF系统中的电阻率。对于q = 0和在静态极限内的有限温度进行数值分析。与实验结果相比,结果分析令人满意。

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