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首页> 外文期刊>IETE Technical Review >Bi-Stability in an Improved Memristor-Based Third-Order Wien-Bridge Oscillator
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Bi-Stability in an Improved Memristor-Based Third-Order Wien-Bridge Oscillator

机译:基于改进的忆耳的三阶维也纳桥振荡器中的双稳定性

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摘要

This paper reports the emergence of bi-stability in a third-order memristive Wien-bridge oscillator. By transforming the parallel RC feedback network into a series resistor and capacitor (RC) feedback network in the previous non-ideal voltage-controlled memristor emulator, an improved memristor emulator is proposed and its fingerprints are exhibited. And then through introducing the proposed emulator to replace the parallel resistor in the conventional Wien-bridge oscillator, an improved memristor-based third-order Wien-bridge oscillator is constructed. Based on its mathematical model, the initial condition-dependent dynamical behaviour is revealed by theoretical analyses and numerical simulations and further verified by hardware experiments, from which the emergence of bi-stability in the memristive oscillator is well demonstrated.
机译:本文报告了三阶忆出维也纳桥振荡器中双稳定性的出现。通过将并行RC反馈网络转换为串联电阻器和电容器(RC)反馈网络,提出了一种改进的映射器仿真器,并且其指纹被展示。然后通过引入所提出的仿真器来更换传统的Wien桥振荡器中的并联电阻,构建了一种改进的基于忆耳的三阶Wien桥振荡器。基于其数学模型,由理论分析和数值模拟揭示了初始条件依赖性动态行为,并通过硬件实验进一步验证,从中展示了椎间膜振荡器中的双稳定性的出现。

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