...
首页> 外文期刊>IETE Journal of Research >Filter Design Methodology and Application of GaN HEMTs in High-Frequency DC/DC Converter
【24h】

Filter Design Methodology and Application of GaN HEMTs in High-Frequency DC/DC Converter

机译:GaN HEMT在高频DC / DC转换器中的滤波器设计方法和应用

获取原文
获取原文并翻译 | 示例

摘要

Optimization of the radio frequency (RF) transmitter performance in envelope tracking (ET) and envelope elimination and restoration (EER) techniques directly implies optimization of the envelope amplifier (EA) design. Since EA should have fast dynamic response together with high efficiency, synchronous buck is a suitable topology for this kind of application. The key issues for optimization of the converter design are the characteristics of the switching devices, the LC filter design, and the driving circuit for the switches. In this paper, design optimization of the LC filter for sinusoidal output voltage together with new technological solution for switching devices based on gallium nitride is proposed, while the applied drivers are commercially available ones, suitable for aforementioned GaN switches. Design of the output filter in synchronous buck converter for high-frequency application is important from two points of view: the first one is sufficient attenuation of the unwanted harmonics of the switching frequency so that envelope reference has minimum level of distortion and the second one is the overall impact of the filter design on the converter's efficiency. In order to increase the efficiency, the LC filter should be designed in a way to obtain compromise between the conduction and switching losses of the buck converter. In the case of sinusoidal output voltage, filter design parameter has been defined as the ratio between the maximum values of the inductor current and load current and power losses dependence on this parameter has been obtained. Theoretically obtained optimum design has been confirmed through experimental measurements, where four different designs were built and tested. On the other hand, application of new switching devices based on gallium nitride provided significant efficiency enhancement in comparison to Si MOSFETs and laterally diffused MOS transistors, due to the lower values of the gate charge and on-resistance. Tests with 64QAM and wideband code division multiple access (WCDMA) RF signals showed that these devices are the best choice for this kind of application, where the main challenge is to increase the efficiency of the signal transmission simultaneously with the bandwidth.
机译:包络跟踪(ET)和包络消除与恢复(EER)技术中射频(RF)发射机性能的优化直接意味着包络放大器(EA)设计的优化。由于EA应该具有快速的动态响应和高效率,因此同步降压是此类应用的合适拓扑。优化转换器设计的关键问题是开关器件的特性,LC滤波器设计以及开关的驱动电路。本文提出了针对正弦输出电压的LC滤波器的设计优化,以及基于氮化镓的开关器件的新技术解决方案,而应用的驱动器是可商用的,适用于上述GaN开关。从两个角度来看,同步降压转换器中用于高频应用的输出滤波器的设计很重要:第一个是充分衰减开关频率的有害谐波,从而使包络参考具有最小的失真水平,第二个是滤波器设计对转换器效率的总体影响。为了提高效率,LC滤波器的设计应在降压转换器的导通损耗和开关损耗之间取得折中。在正弦输出电压的情况下,滤波器设计参数已定义为电感器电流和负载电流的最大值之间的比率,并且获得了与此参数相关的功率损耗。理论上获得的最佳设计已通过实验测量得到了证实,其中建立并测试了四种不同的设计。另一方面,由于栅极电荷和导通电阻值较低,与Si MOSFET和横向扩散的MOS晶体管相比,基于氮化镓的新型开关器件的应用显着提高了效率。对64QAM和宽带码分多址(WCDMA)RF信号的测试表明,这些设备是此类应用的最佳选择,其中主要挑战是在增加带宽的同时提高信号传输的效率。

著录项

  • 来源
    《IETE Journal of Research 》 |2014年第3期| 240-248| 共9页
  • 作者单位

    Universidad Politecnica de Madrid, Centro de Electronica Industrial, Madrid 28006, Spain;

    Universidad Politecnica de Madrid, Centro de Electronica Industrial, Madrid 28006, Spain;

    Universidad Politecnica de Madrid, Centro de Electronica Industrial, Madrid 28006, Spain;

    Universidad Politecnica de Madrid, Centro de Electronica Industrial, Madrid 28006, Spain;

    Universidad Politecnica de Madrid, Centro de Electronica Industrial, Madrid 28006, Spain;

    Universidad Politecnica de Madrid, Centro de Electronica Industrial, Madrid 28006, Spain;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ET; EER; Envelope amplifier; GaN HEMTs; Wide large signal bandwidth; High efficiency;

    机译:ET;EER;包络放大器;GaN HEMT;宽大的信号带宽;高效率;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号