Implementation Aspects of Logic Functions using Single Electron Threshold Logic Gates and Hybrid SET-MOS Circuits

摘要

Single electron technology is an attractive technology for future low-power VLSI/ULSI systems. Single electronics implies the possibility to control the movement and position of a single electron or a small amount of electrons. In this work, design, implementation, and analysis of logic functions are presented using single electron threshold logic gate (TLG) and hybrid SET-MOS circuits. The logic operation of the designed circuit is tested using Monte Carlo-based simulation tool SIMON for the single electron threshold logic circuit. For the hybrid SET-MOS-based implementation, the logic operation of the circuit is verified in Tanner environment. A compact analytical model with 11 island states for SET devices and BSIM4.6.1 model for MOS is used. The influence of thermal fluctuation on the stability of the threshold logic-based circuit, caused by increase in system temperature, has been thoroughly investigated. The effect of island states on the performance of the hybrid SET-MOS circuit is analysed. Finally, the performances of both the design approaches have been analysed and compared in terms of circuit elements, voltage levels, power consumption, and delay.