High-Frequency Device-Modeling Techniques for RF-CMOS Circuits

摘要

Simple and scalable device-modeling techniques for inductors and capacitors are described. All model parameters are calculated from geometric parameters of the device, process parameters of the technology, and a substrate resistance param- eter. Modeling techniques for other devices, such as resistors, varactor diodes, pads and MOSFETs, are also described. Some simulation results using the proposed device-modeling techniques are compared with measured results and they indicate adequency of the proposed device-modeling techniques.