...
首页> 外文期刊>IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences >10-GHz SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using the Fully Symmetrical and Time-Delay Compensated LO Cells
【24h】

10-GHz SiGe BiCMOS Sub-Harmonic Gilbert Mixer Using the Fully Symmetrical and Time-Delay Compensated LO Cells

机译:10 GHz SiGe BiCMOS次谐波吉尔伯特混频器,使用完全对称和延时补偿的本振单元

获取原文
获取原文并翻译 | 示例
           

摘要

A 10-GHz sub-harmonic Gilbert mixer is demonstrated in this paper using the 0.35 μm SiGe BiCMOS technology. The time-delay when the sub-harmonic LO (Local Oscillator) stage generates sub-harmonic LO signals is compensated by using fully symmetrical multiplier pairs. High RF-to-IF isolation and sub-harmonic LO Gilbert cell with excellent frequency response can be achieved by the elimination of the time-delay. The SiGe BiCMOS sub-harmonic micromixer exhibits 17 dB conversion gain, -74 dB 2LO-W-RF isolation, IP_(1dB) of -20 dBm, and IIP_3, of -10dBm. The measured double sideband noise figure is 16 dB from 100-kHz to 100-MHz because the SiGe bipolar device has very low 1/f noise corner.
机译:本文使用0.35μmSiGe BiCMOS技术演示了一种10 GHz次谐波吉尔伯特混频器。通过使用完全对称的乘法器对,可以补偿次谐波LO(本地振荡器)级产生次谐波LO信号时的延时。通过消除时间延迟,可以实现具有出色的频率响应的高RF至IF隔离和亚谐波LO Gilbert单元。 SiGe BiCMOS次谐波微型混频器具有17 dB的转换增益,-74 dB的2LO-W-RF隔离,-20 dBm的IP_(1dB)和-10dBm的IIP_3。从100kHz到100MHz,测得的双边带噪声系数为16 dB,这是因为SiGe双极型器件的1 / f噪声角非常低。

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号