Recent Progress in GaInNAs Laser

摘要

Our recent progress in improving the perfor- mance of the GaInNAs laser is fully reviewed here. We improved the crystal quality of GaInNAs by optimizing the conditions for its grown by gas-source. We found that the temperature window radicals as a N source. We found that the temperature sindow for obtaining, and good photoluminescence (PL) characteristics is morphology, and good photoluminescence (PL) characteristics is smaller than that for obtaining this kind of GaInAs.