Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask

摘要

The epitaxial lateral overgrowth (ELO) of GaN with a stripe tungsten (W) mask pattern is performed by hy- dride vapor phase epitaxy (HVPE) and the crystalline and op- tical properties are investigated compared with ELO GaN using SiO_2 mask by characterizations of X-ray rocking curve (XRC), Transmission electron microscopy (TEM) and low temperature cathodoluminescence (CL). A buried ELO structure of the W mask with a smooth surface is successfully obtained.