A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si

摘要

Schottky gas sensors of CO were fabricated using high quality AlGaN/GaN/Si heterostructures. The CO sensors show good sensitivity in the temperature range of 250 to 300℃ (530%, at 160ppm CO in N_2 and fast response comparable with SnO_2 sensors. A two-region linear regime was observed for the dependence of sensitivity on CO concentration. GaN sensors on Si substrate offer the possibility of integration with Si based electronics. The gas sensors show slow response with time, the change of material properties possibly in the presence of large thermal stress.