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Simple Analytical Model of CMOS Transimpedance Amplifier to Enhance Operational Bandwidth

机译:增强工作带宽的CMOS跨阻放大器的简单分析模型

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摘要

This article presents the CMOS transimpedance amplifier (TIA) for gigabits optical communication, where an analytical method for designing a wideband TIA using different inductive peaking technology is introduced. In this study, we derive and analyze the transfer function (V_(out)/I_(in)) of the TIA circuit from the equivalent circuit model. By adding the peaking inductor in different locations, the TIA 3-dB bandwidth can be enhanced without sacrificing the transimpedance gain. These TIA designs have been realized by the advanced CMOS process, and the measured results confirm the predictions from the analytic approach, where the inductive peaking is an useful way to enhance the TIA bandwidth.
机译:本文介绍了用于千兆位光通信的CMOS跨阻放大器(TIA),其中介绍了一种使用不同的电感峰技术设计宽带TIA的分析方法。在这项研究中,我们从等效电路模型推导并分析了TIA电路的传递函数(V_(out)/ I_(in))。通过在不同位置添加峰值电感器,可在不牺牲跨阻增益的情况下增强TIA 3-dB带宽。这些TIA设计已通过先进的CMOS工艺实现,并且测量结果证实了分析方法的预测,其中感应峰化是增强TIA带宽的有用方法。

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