Analysis and Design of Sub-Threshold R-MOSFET Tunable Resistor

摘要

The sub-threshold R-MOSFET resistor structure which enables tuning range extension below the threshold voltage in the MOS-FET with moderate to weak inversion operation is analyzed in detail. The principal operation of the sub-threshold resistor is briefly described. The analysis of its characteristic based on approximations of a general MOS equation valid for all regions is given along with discussion on design implication and consideration. Experiments and simulations are provided to validate the theoretical analysis and design, and to verify the feasibility at a supply voltage as low as 0.5 V using a low-threshold devices in a 1.8-V 0.18 μm CMOS process.