Improvement of the Leakage by Second Thermal Oxidation Process Power Trench Gate MOSFET

摘要

Power MOSFETs are used as control switches in many application. Comparing with bipolar junction transistor, power MOSFET can be employed in high frequency system because of its high switching speed The power trench gate MOSFET structure is suitable for low voltage system and believed to be a good solution for obtaining low specific on-resistance because of the lack of parasitic JFET resistance and high cell density compares with the conventional power MOSFET. However, the high leakage current occurs from the gate and the source, which results from the loading effect, during the device etch process. In this study, we use second thermal oxidation process to form an oxidation layer to reduce the leakage.