Quantum Modeling of Carrier Transport through Silicon Nano-devices

摘要

Drain-current-gate-voltage characteristics of nano-scale silicon MOSFETs have been calculated within non-equilibrium Green's function formalism to study crystalline orientation effects on ballistic hole current in ultrathin-body double-gate MOSFETs. A <110>-channel device on (110)-substrate is found to carry the highest current density. Device-characteristics difference between double-gate and gate-all-around MOSFETs is also discussed.