Theoretical study on graphene field-effect transistors

摘要

Graphene is one of the most attractive materials for "beyond CMOS" electronics. We investigate graphene-layer compositions suitable for the channel in graphene field-effect transistors (GFETs) in terms of the energy band structure and charge controllability. We examine three major methods of opening a bandgap in graphene. We then compare the threshold voltage and subthreshold-slope characteristics as measures of short-channel effects for GFETs, where graphene is modeled as a narrow-gap semiconductor based on the band consideration, with those for ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs using a drift-diffusion-based simulator. The intrinsic delay times for GFETs are also compared with those for UTB-SOI MOSFETs.