InP Gunn diodes with shallow-barrier Schottky contacts

摘要

We studied current limiting effect for InP Gunn diodes with the current-limiting cathode. Current limiting at the cathode was achieved by a shallow Schottky barrier at the interface. We discussed the results for negative differential resistance and MESA etching in InP Gunn diodes. It was shown that the fabricated Gunn diodes have the output power of 10.22 dBm at a frequency of 90.13 GHz. Its anode diameter was 60 nm and input voltage and corresponding current were 8.55 V and 252mA, respectively.