Electrochemical formation of InP porous structures for their application to photoelectric conversion devices

摘要

We report the electrochemical formation of porous structures on n-type epitaxial layers grown on p-type InP substrates in view of the application to the photoelectric conversion devices. We successfully formed the arrays of regular-sized pores whose diameter and depth could be changed by the doping density and anodic conditions, respectively. From the photo Ⅰ-Ⅴ measurements, we confirmed the optical absorption process in the porous layers whose photovoltaic response strongly depended on the structural properties.