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Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation

机译:阈值电压波动下180nm电流控制MOS电流模式逻辑稳定电路操作的验证

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摘要

We have succeeded in the verification of stable circuit operation of 180nm Current Controlled MOS Current Mode Logic (CC-MCML) under threshold voltage fluctuations by measurement. The performance stability of the CC-MCML inverter under the fluctuations of threshold voltage of NMOS and PMOS is evaluated from the viewpoint of diminishing the bias offset voltage ΔV_B. The ΔV_B, that is defined as (base voltage of output waveform) - (base voltage of input waveform), is a key design parameter for differential circuit. It is shown that when the threshold voltage of NMOS fluctuates in the range of 0.53V to 0.69V, and threshold voltage of PMOS fluctuates in the range of -0.47V to -0.67V, the CC-MCML technique is able to suppress ΔV_B within only 30mV, where as the conventional MCML technique caused maximum ΔV_B of 1.0V. In this paper, it is verified for the first time that the proposed CC-MCML is more tolerant against the fluctuations of threshold voltages than the conventional MCML.
机译:通过测量,我们已经成功验证了在阈值电压波动下180nm电流控制MOS电流模式逻辑(CC-MCML)的稳定电路操作。从减小偏置偏置电压ΔV_B的观点出发,评价了NMOS和PMOS的阈值电压的变动下的CC-MCML逆变器的性能稳定性。 ΔV_B定义为(输出波形的基础电压)-(输入波形的基础电压),是差分电路的关键设计参数。结果表明,当NMOS的阈值电压在0.53V至0.69V的范围内波动,而PMOS的阈值电压在-0.47V至-0.67V的范围内波动时,CC-MCML技术能够将ΔV_B抑制在仅30mV,这是传统的MCML技术导致的最大ΔV_B为1.0V。在本文中,首次验证了所提出的CC-MCML比常规MCML更能承受阈值电压的波动。

著录项

  • 来源
    《電子情報通信学会技術研究報告》 |2010年第110期|p.263-267|共5页
  • 作者单位

    Center for Interdisciplinary Research, Tohoku University Aramaki aza Aoba 6-3, Aoba-ku, Sendai, 980-8578 Japan;

    Center for Interdisciplinary Research, Tohoku University Aramaki aza Aoba 6-3, Aoba-ku, Sendai, 980-8578 Japan;

    Center for Interdisciplinary Research, Tohoku University Aramaki aza Aoba 6-3, Aoba-ku, Sendai, 980-8578 Japan;

    Center for Interdisciplinary Research, Tohoku University Aramaki aza Aoba 6-3, Aoba-ku, Sendai, 980-8578 Japan;

    Center for Interdisciplinary Research, Tohoku University Aramaki aza Aoba 6-3, Aoba-ku, Sendai, 980-8578 Japan;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    current controlled-MCML; MCML; vth fluctuation; stability; NMOS; PMOS;

    机译:当前控制的MCML;MCML;波动稳定性;NMOS;功率MOS;
  • 入库时间 2022-08-18 00:33:24

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