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Characterization of deep electron levels of AlGaN grown by MOVPE

机译：MOVPE生长的AlGaN深电子能级的表征

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摘要

Deep electronic levels of Al_xGa_(1-x)N (0.25 1.5 eV) were detected by the photocapacitance measurement. The origin of the dominant deep level in AlGaN is related to defect complex including anti-site defects and divacancies.
机译：使用深能级瞬态光谱法（DLTS）和光电容方法研究了Al_xGa_（1-x）N的深电子能级（0.25 1.5 eV）。 AlGaN中主要的深能级的起源与缺陷复合物有关，包括反位缺陷和空位。

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  • 来源
    《電子情報通信学会技術研究報告》 |2010年第110期|p.249-252|共4页
  • 作者

    Kimihito Ooyama; Katsuya Sugawara; Hiroyuki Taketomi; Hideto Miyake; Kazumasa Hiramatsu; Tamotsu Hashizume;

  • 作者单位

    Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, Japan,Electronics Division, Sumitomo Metal Mining, Japan;

    Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, Japan;

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, Japan;

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, Japan;

    Department of Electrical and Electronic Engineering, Faculty of Engineering, Mie University, Japan;

    Research Center for Integrated Quantum Electronics and Graduate School of Information Science and Technology, Hokkaido University, Japan,Japan Science and Technology Agency (JST)-CREST;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    AlGaN; schottky barrier; deep level; DLTS; photo-capacitance;

    机译：氮化铝镓;肖特基势垒深层次DLTS;光电电容;
  • 入库时间 2022-08-18 00:33:24

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