NH_3分解触媒を用いたInNのMOVPE成長

摘要

In order to increase the NH_3 decomposition rate in the MOVPE growth of InN, the employment of Pt catalyst has been proposed and experimentally demonstrated. Electrical and crystallographic properties of InN are markedly improved by using Pt catalyst. An electron mobility as high as 1340 cm~2/Vs and a tilt fluctuation as low as 8.63 arcmin have been obtained for InN films grown with Pt catalyst. The improvements of electrical and crystallographic properties of InN with increasing grown InN thickness have been also found.%NH_3を窒素源とするInNのMOVPE成長において、NH_3の分解率向上のためにPt触媒の導入を提案し検討した。Pt触媒の導入によって、InN膜の電気的特性ならびに結晶学的特性が向上することを確認した。電気的特性では電子移動度1340cm~2Nsを得た。結晶学的特性では8.63 arcminのTilt値を実現した。また、InN膜の厚膜化による電気的特性ならびに結晶学的特性の向上を確認した。