1.3μm波長帯AlGaInAs／InP埋め込みヘテロ構造トランジスタレーザの室温連続発振

摘要

従来の光源である半導体レーザダイオード（LD）を超える高速動作が期待される長波長帯トランジスタレーザ（TL）に関する報告を行う。まず、AlGaInAs/InP系量子井戸活性層及び埋め込みヘテロ構造を有する1,3μm波長帯pnp型TLを作製し、TLしきい値エミッタ電流値17mAにおいて長波長帯TLとして初となる室温連続発振を達成した。また、TL特有の誘導放出に伴う電流利得抑制効果を観測することに成功した。また、npn型凡作製においては室温パルス発振を達成し、しきい値ベース電流18mA、しきい値エミッタ電流150mAを得た。また、しきい値における電流利得は7.3と見積もられ、キャリア引き抜きと発振動作を同時に得る事に成功した。%A long-wavelength transistor laser (TL), which is expected to be a promising candidate for next generation optical communication systems beyond the laser diode (LD) because of their high-speed modulation capability, was fabricated and demonstrated. First, a 1.3-μm wavelength pnp-TL consisting of AlGalnAs/InP five quantum-well active region and buried heterostructure was fabricated. A room-temperature continuous wave operation of a AlGalnAs/InP long-wavelength TL was achieved with a threshold emitter current of 17 mA and suppression of the current gain due to stimulated emission was obtained. Next, an npn-TL was fabricated and successfully operated under a room-temperature pulsed condition with a threshold base current of 18 mA and a threshold emitter current of 150 mA. A lasing operation as well as the transistor action with estimated current gain of 7.3 was obtained at the same time.