X線その場観察装置を用いたMOVPE結晶成長

摘要

本研究では有機金属化合物気相成長法を用いた窒化物半導体の結晶成長においてX線その場観察技術の導入が可能かを検討した。MOVPE装置にBeのViewportを作り、さらにX線源およびディテクター部分を工夫することによって、「般的なX線回折測定の2θ/ωスキャンと同等の測定を結晶成長中に1秒間で測定可能なことを確認した。本報告では、窒化物半導体の結晶成長中その場観廃結果およびGAlNN量子井戸を1120℃まで昇温した時の変化について検討したのであわせて報告する。%Nitride-based high-brightness light emitting diodes and high-power laser diodes have been achieved as a result of several breakthroughs. For further device performance improvement, it is necessary to understand the mechanism of crystal growth. Use of an in situ observation system during crystal growth is effective. X-ray diffraction (XRD) obtained many information on crystalline quality. However, although it is a useful in situ technique, it method has serious problems. A typical XRD is required for scanning such as a detector, a stage and/or a tube. Therefore, because the system requires a long time for measurement, it is a difficult to directly apply the in situ measurement system. In this study, we examined the MOVPE growth of nitrides analyzed using a novel in-situ XRD measurement system without scanning.