Si基板上光閉じ込め構造に向けたA1GaPN混晶の分子線エビタキシー成長

摘要

An AlP-based dilute nitride is one of the candidates for the cladding layer of laser structure in a Si-based optoelectronic integrated circuits (OEIC). In order to design the optical confinement structure, growth properties and optical constants of AlGaPN have been investigated. Nitrogen incorporation efficiency is increased by adding Al contents, but shows small effect of the growth temperatures. A high quality AlGaPN which can be lattice matched to Si obtained at the growth temperature of 600 ℃. The refractive indexes of AlGaPN with the N concentration of a few % are almost the same an AlGaP. Finally AlPN/GaPN DBR is fabricated.%格子整合系Ⅲ-Ⅴ-N/Siの発光素子構造において、Siと格子整合した低屈折率混晶があれば光閉じ込め構造作製に応用できる。そこでSi格子整合系の低屈折率混晶としてAlGaPN混晶の成長条件確立を目指し、N組成の成長温度依存性とA1組成依存性に関する知見を得た。また反射スペクトルよりAlGaPN混晶の屈折率を明らかに　し、AlGaPN/GaPNの光閉じ込め構造の設計と分布ブラッグ反射鏡の試作を行った。